rev.1.00 aug 10, 2005 page 1 of 8 HTT1127E silicon npn epitaxial twin transistor rej03g0839-0100 (previous ade-208-1540) rev.1.00 aug.10.2005 features ? include 2 transistors in a small size smd package: emfpak?6 (6 leads: 1.2 x 0.8 x 0.5 mm) q1: equivalent buffer transistor q2: equivalent osc transistor 2sc5700 2sc5849 outline renesas package code: pxsf0006la-a (package name: emfpak-6) 1. collector q1 2. emitter q1 3. collector q2 4. base q2 5. emitter q2 6. base q1 65 4 3 2 1 b1 e2 b2 c1 e1 c2 pin arrangement q1 q2 1 2 3 4 5 6 note: marking is ?r?.
HTT1127E rev.1.00 aug 10, 2005 page 2 of 8 absolute maximum ratings (ta = 25 c) ratings item symbol q1 q2 unit collector to base voltage v cbo 15 15 v collector to emitter voltage v ceo 4 6 v emitter to base voltage v ebo 1.5 1.5 v collector current i c 50 80 ma collector power dissipation p c total 200* mw junction temperature tj 150 150 c storage temperature tstg ?55 to + 150 ?50 to +150 c note: *value on pcb. (fr?4 (13 x 13 x 0.635 mm)). 0 50 100 150 200 collector power dissipation pc* (mw) collector power dissipation curve ambient temperature ta ( c) 250 200 150 100 50 *value on pcb. (fr?4 (13 x13 x 0.635 mm)) 2 devices total
HTT1127E rev.1.00 aug 10, 2005 page 3 of 8 q1 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 15 ? ? v i c = 10 a, i e = 0 collector cutoff current i cbo ? ? 0.1 a v cb = 15 v, i e = 0 collector cutoff current i ceo ? ? 1.0 a v ce = 4 v, r be = infinite emitter cutoff current i ebo ? ? 0.1 a v eb = 0.8 v, i c = 0 dc current transfer ratio h fe 100 120 150 ? v ce = 1 v, i c = 5 ma reverse transfer capacitance c re ? 0.3 0.45 pf v cb = 1 v, f = 1 mhz emitter ground gain bandwidth product f t 10 12 ? ghz v ce = 1 v, i c = 5 ma, f = 1 ghz forward transfer coefficient |s 21 | 2 13 16 ? db noise figure nf ? 1.0 1.7 db v ce = 1 v, i c = 5 ma, f = 900 mhz, s = l = 50 ? q2 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 15 ? ? v i c = 10 a, i e = 0 collector cutoff current i cbo ? ? 0.1 a v cb = 15 v, i e = 0 collector cutoff current i ceo ? ? 0.1 a v ce = 4 v, r be = infinite emitter cutoff current i ebo ? ? 0.1 a v eb = 1.5 v, i c = 0 dc current transfer ratio h fe 90 120 140 ? v ce = 1 v, i c = 5 ma reverse transfer capacitance c re ? 0.50 0.65 pf v cb = 1 v, f = 1 mhz emitter ground gain bandwidth product f t 2.0 4.0 ? ghz v ce = 1 v, i c = 5 ma, f = 1 ghz forward transfer coefficient |s 21 | 2 7 11 ? db noise figure nf ? 1.7 2.3 db v ce = 1 v, i c = 5 ma, f = 900 mhz s = l = 50 ?
HTT1127E rev.1.00 aug 10, 2005 page 4 of 8 q1 main characteristics 100 10 100 200 0 1 20 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 25 50 v ce = 1 v 01234 typical output characteristics collector to emitter voltage v ce (v) collector current i c (ma) 20 30 40 50 10 0 0.4 0.6 1.0 typical forward transfer characteristics base to emitter voltage v be (v) 0.2 0.8 v ce = 1 v collector current i c (ma) 10 20 30 40 50 i b = 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 500 a collector to base voltage v cb (v) reverse transfer capacitance c re (pf) reverse transfer capacitance vs. collector to base voltage 0.4 0.3 0.2 0.1 0 0.2 0.4 0.6 1.0 emitter ground f = 1 mhz 0.5 0.8 20 16 12 8 4 0 1 2 5 10 20 50 100 collector current i c (ma) gain bandwidth product f t (ghz) gain bandwidth product vs. collector current f = 1 ghz v ce = 2 v collector current i c (ma) noise figure nf (db) noise figure vs. collector current 6 4 3 2 1 0 1 2 5 10 20 50 100 5 v ce = 1 v f = 900 mhz v ce = 1 v v ce = 2 v v ce = 1 v
HTT1127E rev.1.00 aug 10, 2005 page 5 of 8 20 16 12 8 4 0 12 51020 50100 collector current i c (ma) s 21 parameter |s 21 | 2 (db) s 21 parameter vs. collector current f = 900 mhz v ce = 1 v v ce = 2 v
HTT1127E rev.1.00 aug 10, 2005 page 6 of 8 q2 main characteristics 20 16 12 8 4 123456 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 200 100 0 0.1 1.0 10 100 i b = 20 a 40 a 60 a 80 a 100 a 120 a 140 a 160 a v ce = 1 v v ce = 1 v 0 180 a typical output characteristics collector current i c (ma) collector to emitter voltage v ce (v) typical forward transfer characteristics collector current i c (ma) base to emitter voltage v be (v) dc current transfer ratio h fe dc current transfer ratio vs. collector current collector current i c (ma) collector to base voltage v cb (v) reverse transfer capacitance c re (pf) reverse transfer capacitance vs. collector to base voltage 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 1.0 emitter ground f = 1 mhz 1.0 0.8 6 4 3 2 1 0 12 51020 50100 collector current i c (ma) noise figure nf (db) noise figure vs. collector current 5 v ce = 1 v f = 900 mhz v ce = 1 v v ce = 2 v 10 6 12 8 4 0 12 51020 50100 collector current i c (ma) gain bandwidth product f t (ghz) gain bandwidth product vs. collector current f = 1 ghz v ce = 2 v v ce = 1 v 2
HTT1127E rev.1.00 aug 10, 2005 page 7 of 8 20 16 12 8 4 0 12 51020 50100 collector current i c (ma) s 21 parameter |s 21 | 2 (db) s 21 parameter vs. collector current f = 900 mhz v ce = 1 v v ce = 2 v
HTT1127E rev.1.00 aug 10, 2005 page 8 of 8 package dimensions e c a l a e b h e l p a 2 i 1 b 2 a a 1 d a xsa m s ys b a-a section b 1 c 1 c e 1 e pattern of terminal position areas a a 1 a 2 b b 1 c c 1 d e e h e l l p x y b 2 e 1 i 1 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1 min nom dimension in millimeters reference symbol max 0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1 0.7 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.35 ? 0.0012g mass[typ.] emfpak-6 / emfpak-6v pxsf0006la-a renesas code jeita package code package name ordering information part name quantity shipping container HTT1127Ertl-e 5000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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